| PART |
Description |
Maker |
| FLM1415-6F |
Internally Matched Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLM5964-12DA |
Internally Matched Power GaAs FETs
|
Fujitsu
|
| FLM1414-3F |
Internally Matched Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| MGFC40V4450 MGFC40V445011 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC36V5964A MGFC36V5964A11 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| FLM1414-4F |
Internally Matched Power GaAs FET 内部匹配砷化镓场效应
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| MGFK25V4045 MGFK25V404511 |
X/Ku band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC38V647211 |
C band internally matched power GaAs FET
|
http://
|
| MGFK33V4045 MGFK33V404511 |
X/Ku band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC40V3742 MGFC40V374211 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC39V5258 C395258 |
5.2 - 5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.2~5.8GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK30V4045 K304045 |
14.0~14.5GHZ BAND 1W INTERNALLY MATCHED GAAS FET
From old datasheet system
14.0-14.5GHz BAND 1W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
